fast recovery diode rf501b2s ? applications ? dimensions unit : mm general rectification ? features 1) power mold type.(cpd) 2) high reliability 3) low v f 4) very fast recovery 5) low switching loss ? structure ? construction silicon epitaxial planar ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v io a i fsm a tj c tstg c ? electrical characteristics (ta=25 ? c) symbol min. typ. max. unit forward voltage v f - 0.86 0.92 v i f =5a reverse current i r - 0.015 1 a v r =200v reverse recovery time trr - 15 30 ns parameter average rectified forward current (*1) 5 forward current surge peak (60hz / 1cyc)(*1) 40 junction temperature 150 storage temperature ? 55 to ? 150 conditions ? land size figure (unit : mm) i f =0.5a,i r =1a,irr=0.25*i r parameter limits reverse voltage (repetitive peak) 200 reverse voltage (dc) 200 (*1)business frequencies, rating of r-load, 1/2 io per diode, tc=128 ? c 1.6 2.3 1.6 2.3 3.0 2.0 6.0 6.0 cpd (1) (3) (2) 1/3 2011.05 - rev.g data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf501b2s ? electrical characteristic curves 0 5 10 15 20 25 30 ave : 14.5ns ta=25 ? c i f =0.5a i r =1a irr=0.25*i r n=10pcs 0 50 100 150 200 250 300 ave : 88.0a 8.3ms ifsm 1cyc 1 10 100 1000 01 02 03 0 f=1mhz 150 160 170 180 190 200 ave : 74.9pf ta=25 ? c f=1mhz v r =0v n=10pcs 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 1000 10000 0 50 100 150 200 ta=150 ? c ta=125 ? c ta=75 ? c ta=25 ? c ta=-25 ? c 840 850 860 870 880 890 0.001 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 900 1000 ta=150 ? c ta=125 ? c ta=75 ? c ta=25 ? c ta=-25 ? c 1 10 100 1000 110100 forward voltage : v f (mv) v f -i f characteristics forward current : :i f (a) reverse current : i r (na) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage : v f (mv) reverse current : i r (na) i r dispersion map capacitance between terminals : ct(pf) ct dispersion map i fsm dispersion map peak surge forward current : i fsm (a) peak surge forward current : i fsm (a) number of cycles i fsm -cycle characteristics trr dispersion map reverse recovery time : trr(ns) ta=25 ? c v r =200v n=30pcs ave : 10.7na ave:856.6mv ta=25 ? c i f =5a n=30pcs\ 8.3ms ifsm 1cyc 8.3ms 2/3 2011.05 - rev.g www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf501b2s 0 2 4 6 8 10 0246810 d=1/2 dc sin( ?? 180) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=100ma i f =1a 300us tim mounted on epoxy board 10 100 1000 110100 t ifsm peak surge forward current : i fsm (a) time : t(ms) i fsm -t characteristics time : t(s) rth-t characteristics transient thaermal impedance : rth ( ? c/w) forward power dissipation : pf(w) average rectified forward current : io(a) io-pf characteristics 0 2 4 6 8 10 0 25 50 75 100 125 150 sin( ?? 180) d=1/2 dc ambient temperature : ta( ? c) derating curve ? (io-ta) average rectified forward current : lo(a) average rectified forward current : io(a) case temparature : tc( ? c) derating curve ? (io-tc) 0 2 4 6 8 10 0 25 50 75 100 125 150 dc d=1/2 sin( ?? 180) t tj=150 ? c d=t/t t v r io v r =100v 0a 0v t tj=150 ? c d=t/t t v r io v r =100v 0a 0v 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? no break at 30kv electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.05 - rev.g www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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